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| BBY 53 Silicon Tuning Diode Preliminary data * High Q hyperabrupt tuning diode * Designed for low tuning voltage operation for VCO's in mobile communications equipment * High ratio at low reverse voltage Type BBY 53 Marking Ordering Code S7s Q62702-B824 Pin Configuration 1 = A1 2 = A2 Package 3 = C1/C2 SOT-23 Maximum Ratings Parameter Diode reverse voltage Forward current Operating temperature range Storage temperature Symbol Values 6 20 - 55 ... + 150 - 55 ... + 150 Unit V mA C VR IF Top Tstg Semiconductor Group 1 Feb-04-1997 BBY 53 Electrical Characteristics at TA=25C, unless otherwise specified Parameter Symbol min. DC characteristics Reverse current Values typ. max. Unit IR 10 200 nA VR = 4 V, TA = 25 C VR = 4 V, TA = 65 C AC characteristics Diode capacitance CT 4.8 1.85 5.3 2.4 2.2 0.37 0.12 2 5.8 3.1 pF VR = 1 V, f = 1 MHz VR = 3 V, f = 1 MHz Capacitance ratio CT1/CT3 1.8 2.6 pF nH - VR = 1 V, VR = 3 V, f = 1 MHz Series resistance rs CC Ls VR = 1 V, f = 1 GHz Case capacitance f = 1 MHz Series inductance chip to ground Semiconductor Group 2 Feb-04-1997 BBY 53 Diode capacitance CT = f (VR) f = 1MHz 0.6 CT pF 0.4 0.3 0.2 0.1 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 V VR 5.0 Semiconductor Group 3 Feb-04-1997 |
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